* Max RDS(on) = 1.3 mW at VGS = 10 V, ID = 30 A
* Max RDS(on) = 1.8 mW at VGS = 4.5 V, ID = 25 A
* High Performance Technology for Extremely Low RDS(on)
*.

where ultra low RDS(on) is required in small spaces such as High performance VRM, POL and Oring functions. Features

This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for applications where ultra low RDS(on) is required in small spaces such .

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts